| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch 文件：228.21 Kbytes 頁數(shù)：10 Pages | RENESAS 瑞薩 | RENESAS | ||
絲印：XS；Package：SC-96；MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit 文件：283.3 Kbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
絲印：C1；Package：SC-75；MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits 文件：312.64 Kbytes 頁數(shù)：7 Pages | RENESAS 瑞薩 | RENESAS | ||
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES ? Can be driven by a 2.5 V power source. ? Low gat 文件：50.03 Kbytes 頁數(shù)：8 Pages | NEC 瑞薩 | NEC | ||
P-Channel 60 V (D-S) MOSFET 文件：941.18 Kbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Silicon P Channel MOS FET 文件：115.18 Kbytes 頁數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；P-Channel 60 V (D-S) MOSFET 文件：1.87712 Mbytes 頁數(shù)：7 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Silicon P Channel MOS FET 文件：114.91 Kbytes 頁數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET 文件：115.37 Kbytes 頁數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS | ||
Silicon P Channel MOS FET 文件：115.51 Kbytes 頁數(shù)：11 Pages | RENESAS 瑞薩 | RENESAS |
詳細(xì)參數(shù)
- 型號：
2SJ55
- 制造商：
NEC
- 制造商全稱：
NEC
- 功能描述：
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞薩原裝特價(jià)2SJ557即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
RENESAS/瑞薩 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
RENESAS/瑞薩 |
2025+ |
SOT-23 |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請找坤融電子! |
詢價(jià) | ||
NEC |
24+ |
SOT-23 |
17900 |
新進(jìn)庫存/原裝 |
詢價(jià) | ||
NEC |
24+ |
4326 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存! |
詢價(jià) | |||
NEC |
24+ |
SOT-23 |
3000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SMD |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價(jià) | ||
NEC |
24+ |
6540 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) | |||
NEC |
1922+ |
SOT-23 |
35689 |
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價(jià) | ||
NEC |
23+ |
SOT-23SC-59 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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