P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES ? Can be driven

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MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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絲印：XS；Package：SC-96；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SJ557A is a switching device which can be driven directly by a 4 V power source. The 2SJ557A features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swi ? 4 V drive available\n? Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = ?10 V, ID = ?1.0 A) RDS(on)2 = 134 mΩ MAX. (VGS = ?4.5 V, ID = ?1.0 A) RDS(on)3 = 166 mΩ MAX. (VGS = ?4.0 V, ID = ?1.0 A)\n? Built-in gate protection diode;

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Pch enhancement type MOS FET

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