SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES ? 250 V rating high withstand voltage ? Low on-state resistance: RDS(on) = 2.0 ? MAX. (VGS = –10 V, ID = –2.0 A) ? Low input capacitance: Ciss = 470 pF T

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES ? 250 V rating high withstand voltage ? Low on-state resistance: RDS(on) = 2.0 Ω MAX. (VGS = –10 V, ID = –2.0 A) ? Low input cap

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RENESAS

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SWITCHING P-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES\n? 250 V rating high withstand voltage\n? Low on-state resistance:\n? RDS(on) = 2.0 ? MAX. (VGS = –10 V, ID = –2.0 A)\n? Low input capacitance: Ciss = 470 pF TYP.\n? Narrow gate ? 250 V rating high withstand voltage\n? Low on-state resistance:\n? RDS(on) = 2.0 ? MAX. (VGS = –10 V, ID = –2.0 A)\n? Low input capacitance: Ciss = 470 pF TYP.\n? Narrow gate cut-off voltage width:\n?? VGS(off) = ?5.5 to ?4.0 V\n? Built-in gate protection diode\n? Full-mold package for easy mounti;

Renesas

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TO263

RENESAS

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上傳：深圳市正納電子有限公司

TO-220-3

ON

上傳：深圳市芯峰微電子科技有限公司