| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
60 V, single N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ?Very fast switching ?Trench MOSFETtechnology ?ESD protect 文件：667.35 Kbytes 頁數(shù)：15 Pages | 恩XP | 恩XP | ||
絲印：0000；Package：SOT883B；60 V, single N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Very fast switching ? Trench MOSFET technology ? ESD prote 文件：1.4098 Mbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：TSSOP6；60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technolog 文件：298.18 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog 文件：931.08 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT*；Package：SOT-363；60 V, 300 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET echnology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● ESD p 文件：384.54 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technolog 文件：298.18 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/z3/marking.html">Z3；Package：SOT-416；60 V, 290 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology ? E 文件：361.32 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲印：Z3；Package：SOT416；60 V, 290 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD prote 文件：460.37 Kbytes 頁數(shù)：17 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zg/marking.html">ZG；Package：SOT-666；60 V, 340 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFETtechnology 文件：379.26 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/zg/marking.html">ZG；Package：SOT666；60 V, 340 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：281.69 Kbytes 頁數(shù)：14 Pages | NEXPERIA 安世 | NEXPERIA |
技術(shù)參數(shù)
- Package name：
SOT23
- Product status：
Production
- Channel type：
N
- Nr of transistors：
1
- VDS [max] (V)：
60
- RDSon [max] @ VGS = 10 V (mΩ)：
1600
- RDSon [max] @ VGS = 5 V (mΩ)：
2000
- Tj [max] (°C)：
150
- ID [max] (A)：
0.35
- QGD [typ] (nC)：
0.1
- QG(tot) [typ] @ VGS = 4.5 V (nC)：
0.5
- Ptot [max] (W)：
0.37
- VGSth [typ] (V)：
1.6
- Automotive qualified：
Y
- Ciss [typ] (pF)：
33
- Coss [typ] (pF)：
7
- Release date：
2011-01-24
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
21+ |
SOT-23 |
48000 |
原裝現(xiàn)貨、工廠庫存 |
詢價 | ||
恩XP |
24+ |
標(biāo)準(zhǔn)封裝 |
9548 |
全新原裝正品/價格優(yōu)惠/質(zhì)量保障 |
詢價 | ||
Nexperia(安世) |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價 | |||
恩XP |
16+ |
SOT-23 |
9500 |
進(jìn)口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
NEXPERIA |
23+ |
SOT23 |
150000 |
NXP現(xiàn)貨商!常備進(jìn)口原裝庫存現(xiàn)貨! |
詢價 | ||
NEXPERIA |
21+20 |
SOT23 |
120000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
Nexperia/安世 |
21+ |
SOT-23 |
3946 |
十年信譽,只做原裝,有掛就有現(xiàn)貨! |
詢價 | ||
恩XP |
21+ |
SOT-23 |
22800 |
只做原裝,質(zhì)量保證 |
詢價 | ||
NEXP |
2020+PB |
SOT-23 |
9500 |
原裝正品 可含稅交易 |
詢價 | ||
恩XP |
2023+ |
SOT-23 |
15000 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 |
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