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首頁(yè) >2N7002_>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
2N7002K-AU_L1_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_L1_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_L2_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_L2_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_LD_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_LD_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_LU_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_LU_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_LX_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_LX_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT

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技術(shù)參數(shù)

Automotive Compliant PPAP：
On Request*
Polarity：
N+N
ESD Diodes：
No
VDS：
60 V
VGS：
20 ±V
IDS @ TA = +25°C：
0.115 A
PD @ TA = +25°C：
0.3 W
RDS(ON) Max @ VGS (10V)：
N/A mΩ
RDS(ON) Max @ VGS (4.5V)：
7500 mΩ
RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
VGS (th) Max：
2 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
N/A nC
Packages：
SOT363

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市明嘉萊科技有限公司	2N7002DW	FAIRCHILD/仙童	25+	SOT363	154708	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	2N7002DW	FAIRCHILD/仙童	25+	SOT-363	38962	FAIRCHILD/仙童全新特價(jià)2N7002DW即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨	詢價(jià)
深圳市河鋒鑫科技有限公司	2N7002DW	FAIRCHILD/仙童	2020+PB	SOT-363	3750	原裝正品可含稅交易	詢價(jià)
深圳龐田科技有限公司	2N7002DW	CJ/長(zhǎng)電	2023+	SC70-6SOT-363	15000	AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站	詢價(jià)
深圳市天芯威科技有限公司	2N7002DW	ON/安森美	23+	N/A	25850	新到現(xiàn)貨,只有原裝	詢價(jià)
深圳市訊順達(dá)科技有限公司	2N7002DW	Slkor/薩科微	24+	SOT-363	50000	Slkor/薩科微一級(jí)代理,價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市東來(lái)寶電子科技有限公司	2N7002DW	DIODES/美臺(tái)	24+	SOT363	963000	鄭重承諾只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市坤融電子科技有限公司	2N7002DW	DIODES/美臺(tái)	2025+	SOT-363	5000	原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子!	詢價(jià)
深圳市得捷芯城科技有限公司	2N7002DW	ON(安森美)	25+	N/A	21000	原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開票。	詢價(jià)
深圳市高捷芯城科技有限公司	2N7002DW	ON(安森美)	25+	N/A	21000	原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開票。	詢價(jià)

更多2N7002_供應(yīng)商更新時(shí)間2026-1-20 17:56:00

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