| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed 文件：127.12 Kbytes 頁(yè)數(shù)：4 Pages | DIODES 美臺(tái)半導(dǎo)體 | DIODES | ||
N-Channel MOSFET Features ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? ESD Protected up to 2.5KV (HBM) ? Halogen free available upon request by adding suffix -HF 文件：641.93 Kbytes 頁(yè)數(shù)：4 Pages | MCC | MCC | ||
絲?。?a target="_blank" title="Marking" href="/7002k/marking.html">7002K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET General Features VDS = 60V,ID = 0.32A RDS(ON) 文件：347.03 Kbytes 頁(yè)數(shù)：7 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
N-channel TrenchMOS FET General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ElectroStatic Discharge (ESD) protection diodes Applicat 文件：94.25 Kbytes 頁(yè)數(shù)：11 Pages | 恩XP | 恩XP | ||
N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V. ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capablity. ? Suffix U : Qualified to AEC-Q101. ex) 2N7002KA-RTK/HU. 文件：378.36 Kbytes 頁(yè)數(shù)：3 Pages | KEC KEC(Korea Electronics) | KEC | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages | PANJIT 強(qiáng)茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages | PANJIT 強(qiáng)茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages | PANJIT 強(qiáng)茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages | PANJIT 強(qiáng)茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁(yè)數(shù)：7 Pages | PANJIT 強(qiáng)茂 | PANJIT |
技術(shù)參數(shù)
- Automotive Compliant PPAP：
On Request*
- Polarity：
N+N
- ESD Diodes：
No
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.115 A
- PD @ TA = +25°C：
0.3 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
7500 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT363
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT363 |
154708 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
FAIRCHILD/仙童 |
25+ |
SOT-363 |
38962 |
FAIRCHILD/仙童全新特價(jià)2N7002DW即刻詢(xún)購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢(xún)價(jià) | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-363 |
3750 |
原裝正品 可含稅交易 |
詢(xún)價(jià) | ||
CJ/長(zhǎng)電 |
2023+ |
SC70-6SOT-363 |
15000 |
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站 |
詢(xún)價(jià) | ||
ON/安森美 |
23+ |
N/A |
25850 |
新到現(xiàn)貨,只有原裝 |
詢(xún)價(jià) | ||
Slkor/薩科微 |
24+ |
SOT-363 |
50000 |
Slkor/薩科微一級(jí)代理,價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
DIODES/美臺(tái) |
24+ |
SOT363 |
963000 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
DIODES/美臺(tái) |
2025+ |
SOT-363 |
5000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢(xún)價(jià) | ||
ON(安森美) |
25+ |
N/A |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。 |
詢(xún)價(jià) | ||
ON(安森美) |
25+ |
N/A |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號(hào)開(kāi)票。 |
詢(xún)價(jià) |
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