| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/wb/marking.html">WB；Package：SOT-23；N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES ? High density cell design for low RDS(ON). ? Voltage controolled small signal switch. ? Rugged and reliable. ? High saturation current capablity. 文件：561.25 Kbytes 頁數(shù)：4 Pages | KEC KEC(Korea Electronics) | KEC | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Motor Control ? Power Management Functions Features and Benefits ? N-Cha 文件：154.02 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/7002a/marking.html">7002A；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V) 文件：603.85 Kbytes 頁數(shù)：6 Pages | YANGJIE 揚(yáng)杰電子 | YANGJIE | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Motor Control ? Power Management Functions Features and Benefits ? N-Cha 文件：154.02 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/7002a./marking.html">7002A.；Package：SOT-23；MOSFET Features - Trench power MV MOSFET technology. - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage. 文件：573.64 Kbytes 頁數(shù)：6 Pages | COMCHIP 典琦 | COMCHIP | ||
絲印：NJ；Package：SOT-23；N-Channel Enhancement MOSFET High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) 文件：965.81 Kbytes 頁數(shù)：5 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology ? El 文件：288.64 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/qk/marking.html">QK；Package：DFN1110D-3；60 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 文件：301.46 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology ? El 文件：288.64 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/d3/marking.html">D3；Package：SOT1268；60 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench 文件：317.65 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA |
技術(shù)參數(shù)
- Automotive Compliant PPAP：
On Request*
- Polarity：
N+N
- ESD Diodes：
No
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.115 A
- PD @ TA = +25°C：
0.3 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
7500 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT363
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT363 |
154708 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
SOT-363 |
38962 |
FAIRCHILD/仙童全新特價2N7002DW即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-363 |
3750 |
原裝正品 可含稅交易 |
詢價 | ||
CJ/長電 |
2023+ |
SC70-6SOT-363 |
15000 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 | ||
ON/安森美 |
23+ |
N/A |
25850 |
新到現(xiàn)貨,只有原裝 |
詢價 | ||
Slkor/薩科微 |
24+ |
SOT-363 |
50000 |
Slkor/薩科微一級代理,價格優(yōu)勢 |
詢價 | ||
DIODES/美臺 |
24+ |
SOT363 |
963000 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
DIODES/美臺 |
2025+ |
SOT-363 |
5000 |
原裝進(jìn)口價格優(yōu) 請找坤融電子! |
詢價 | ||
ON(安森美) |
25+ |
N/A |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價 | ||
ON(安森美) |
25+ |
N/A |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價 |
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