| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT | ||
60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), [email protected],IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages | PANJIT 強茂 | PANJIT |
技術(shù)參數(shù)
- Automotive Compliant PPAP：
On Request*
- Polarity：
N+N
- ESD Diodes：
No
- VDS：
60 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.115 A
- PD @ TA = +25°C：
0.3 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
7500 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT363
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
SOT363 |
154708 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
SOT-363 |
38962 |
FAIRCHILD/仙童全新特價2N7002DW即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
FAIRCHILD/仙童 |
2020+PB |
SOT-363 |
3750 |
原裝正品 可含稅交易 |
詢價 | ||
CJ/長電 |
2023+ |
SC70-6SOT-363 |
15000 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 | ||
ON/安森美 |
23+ |
N/A |
25850 |
新到現(xiàn)貨,只有原裝 |
詢價 | ||
Slkor/薩科微 |
24+ |
SOT-363 |
50000 |
Slkor/薩科微一級代理,價格優(yōu)勢 |
詢價 | ||
DIODES/美臺 |
24+ |
SOT363 |
963000 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
DIODES/美臺 |
2025+ |
SOT-363 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
ON(安森美) |
25+ |
N/A |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價 | ||
ON(安森美) |
25+ |
N/A |
21000 |
原裝正品現(xiàn)貨,原廠訂貨,可支持含稅原型號開票。 |
詢價 |
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