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          首頁(yè) >2N700>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N7000

          絲?。?a target="_blank" title="Marking" href="/702/marking.html">702;Package:SOT-23;N-Channel Enhancement Mode MOSFET

          ■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

          文件:74.34 Kbytes 頁(yè)數(shù):1 Pages

          KEXIN

          科信電子

          2N7000

          N-Channel Enhancement Mode Power Mos.FET

          FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

          文件:358.46 Kbytes 頁(yè)數(shù):3 Pages

          SECOS

          喜可士

          2N7000

          N-Channel Enhancement-Mode Vertical DMOS FET

          General Description The Supertex 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

          文件:30.39 Kbytes 頁(yè)數(shù):4 Pages

          SUTEX

          2N7000

          N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

          Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

          文件:383.82 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          2N7000

          MOSFET( N-Channel )

          FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

          文件:661.6 Kbytes 頁(yè)數(shù):3 Pages

          KOOCHIN

          灝展電子

          2N7000

          絲?。?a target="_blank" title="Marking" href="/2n7000021/marking.html">2N7000021;Package:TO-92;N-Channel Enhancement Mode Power MOSFET

          FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

          文件:150.26 Kbytes 頁(yè)數(shù):2 Pages

          SECELECTRONICS

          上優(yōu)電子

          2N7000

          N-Channel Enhancement Mode Field Effect Transistor

          Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

          文件:100.13 Kbytes 頁(yè)數(shù):7 Pages

          SYC

          2N7000_V01

          N-Channel Enhancement Mode Field Effect Transistor

          Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

          文件:372.34 Kbytes 頁(yè)數(shù):13 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7000A

          FIELD EFFECT TRANSISTOR

          INTERFACE AND SWITCHING APPLICATION. FEATURES ? High density cell design for low RDS(ON). ? Voltage controolled small signal switch. ? Rugged and reliable. ? High saturation current capablity.

          文件:67.07 Kbytes 頁(yè)數(shù):4 Pages

          KEC

          KEC(Korea Electronics)

          2N7000BU

          Advanced Small Signal MOSFET

          BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

          文件:85.23 Kbytes 頁(yè)數(shù):3 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            60

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            2.5

          • ID Max (A):

            0.115

          • PD Max (W):

            0.2

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            7500

          • RDS(on) Max @ VGS = 10 V(mΩ):

            7500

          • Qg Typ @ VGS = 10 V (nC):

            1

          • Ciss Typ (pF):

            20

          • Package Type:

            SOT-23-3

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          恩XP
          15+
          SOT23
          30000
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          488459
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          SOT236
          99000
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          ON-SEMI
          22+
          N/A
          9000
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          1118
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          340
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          25+
          7589
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          16+
          SOT23
          12350
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          更多2N700供應(yīng)商 更新時(shí)間2021-9-16 14:01:00
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