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          首頁
                >2N700>規(guī)格書列表
                
          
            
          
                
          
                    
          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
          
                    
          2N7000
          FIELD EFFECT TRANSISTOR
          
INTERFACE AND SWITCHING APPLICATION.
FEATURES
? High density cell design for low RDS(ON).
? Voltage controlled small signal switch.
? Rugged and reliable.
? High saturation current capability.
          文件：68.5 Kbytes 頁數(shù)：4 Pages
          KEC
          KEC(Korea Electronics)
          

          2N7000
          N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
          
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
          文件：22.3 Kbytes 頁數(shù)：1 Pages
          DIODES
          美臺半導(dǎo)體
          

          2N7000
          N-Channel Enhancement Mode Field Effect Transistor
          
N-Channel Enhancement Mode Field Effect Transistor
? Power dissipation          350 mW
? Plastic case                      TO-92
? Weight approx.                 0.18 g
? Plastic material has UL classification 94V-0
? Standard packaging taped in ammo pack
          文件：108.73 Kbytes 頁數(shù)：2 Pages
          DIOTEC
          德歐泰克
          

          2N7000
          N-Channel MOSFET
          
Features
? High density cell design for low RDS(ON)
? Voltage controlled small signal switch
? Rugged and reliable
? Halogen free available upon request by adding suffix -HF
? Marking: 2N7000
? Epoxy meets UL 94 V-0 flammability rating
? Moisture Sensitivity Level 1
          文件：904.98 Kbytes 頁數(shù)：3 Pages
          MCC
          

          2N7000
          CASE 29-04, STYLE 22 TO-92 (TO-226AA)
          

          文件：77.54 Kbytes 頁數(shù)：4 Pages
          MOTOROLA
          摩托羅拉
          

          2N7000
          Logic N-Channel MOSFET
          
General Description
This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches.
Features
■ RDS(on) (Max 5 ? )@VGS=10V
   RDS(on) (Max 5.3? )@VGS=4.5V
■ Gate Charge (Typical 
          文件：717.56 Kbytes 頁數(shù)：6 Pages
          SEMIWELL
          矽門微
          

          2N7000
          Small Signal MOSFET N-Channel
          
Features:
* Low On-Resistance : 5 Ω
* Low Input Capacitance: 60PF
* Low Out put Capacitance : 25PF
* Low Threshole :1.4V(TYE)
* Fast Switching Speed : 10ns
          文件：173.9 Kbytes 頁數(shù)：4 Pages
          WEITRON
          

          2N7000
          TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
          
Description
Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
          文件：216.4 Kbytes 頁數(shù)：1 Pages
          DCCOM
          道全
          

          2N7000
          Isc N-Channel MOSFET Transistor
          
? FEATURES
? With TO-92 package
? Low input capacitance and gate charge
? Low gate input resistance
? 100 avalanche tested
? Minimum Lot-to-Lot variations for robust device
   performance and reliable operation
? APPLICATIONS
? Switching applications
? Load switch
? Power management
          文件：312.4 Kbytes 頁數(shù)：2 Pages
          ISC
          無錫固電
          

          2N7000
          MOSFET (N-Channel)
          
MOSFET (N-Channel)
FEATURE
● High density cell design for low RDS(ON)
● Voltage controlled small signal switch
● Rugged and reliable
● High saturation current capability
APPLICATION
● Load Switch for Portable Devices
● DC/DC Converter
          文件：849.24 Kbytes 頁數(shù)：5 Pages
          JIANGSU
          長電科技
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Pb-free：
            Pb
          • Halide free：
            H
          • Status：
            Active
          • Channel Polarity：
            N-Channel
          • Configuration：
            Single
          • V(BR)DSS Min (V)：
            60
          • VGS Max (V)：
            ±20
          • VGS(th) Max (V)：
            2.5
          • ID Max (A)：
            0.115
          • PD Max (W)：
            0.2
          • RDS(on) Max @ VGS = 4.5 V(mΩ)：
            7500
          • RDS(on) Max @ VGS = 10 V(mΩ)：
            7500
          • Qg Typ @ VGS = 10 V (nC)：
            1
          • Ciss Typ (pF)：
            20
          • Package Type：
            SOT-23-3
          
            
          
        
          
            
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