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          首頁(yè) >2N700>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N7000-D26Z

          絲?。?a target="_blank" title="Marking" href="/2n7000/marking.html">2N7000;Package:TO-92;N-Channel Enhancement Mode Field Effect Transistor

          Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

          文件:372.34 Kbytes 頁(yè)數(shù):13 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7000-D74Z

          絲?。?a target="_blank" title="Marking" href="/2n7000/marking.html">2N7000;Package:TO-92;N-Channel Enhancement Mode Field Effect Transistor

          Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

          文件:372.34 Kbytes 頁(yè)數(shù):13 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7000-D75Z

          絲印:2N7000;Package:TO-92;N-Channel Enhancement Mode Field Effect Transistor

          Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

          文件:372.34 Kbytes 頁(yè)數(shù):13 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7000G

          N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

          Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

          文件:383.82 Kbytes 頁(yè)數(shù):14 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          2N7000G

          Small Signal MOSFET 200 mAmps, 60 Volts

          Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 Features ? Pb?Free Packages are Available*

          文件:92.5 Kbytes 頁(yè)數(shù):4 Pages

          ONSEMI

          安森美半導(dǎo)體

          2N7000K

          N Channel MOSFET ESD Protected 2000V

          INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V. ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capablity.

          文件:72.58 Kbytes 頁(yè)數(shù):4 Pages

          KEC

          KEC(Korea Electronics)

          2N7000KL

          N-Channel 60-V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? ESD Protected: 2000 V APPLICATIONS ? Direct Logic-Level Interface: TTL/CMOS ? Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, ?? Display, Memories, Transistors, etc. ? Battery Operated Systems

          文件:73.25 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          2N7000KL-TR1

          N-Channel 60-V (D-S) MOSFET

          FEATURES ? TrenchFET? Power MOSFET ? ESD Protected: 2000 V APPLICATIONS ? Direct Logic-Level Interface: TTL/CMOS ? Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, ?? Display, Memories, Transistors, etc. ? Battery Operated Systems

          文件:73.25 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          2N7000P

          N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

          FEATURES * 60 Volt VCEO * RDS(on) = 5 Ω

          文件:189.12 Kbytes 頁(yè)數(shù):1 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          2N7000R

          Plastic-Encapsulate MOSFET

          FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

          文件:572.01 Kbytes 頁(yè)數(shù):3 Pages

          GWSEMI

          唯圣電子

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            60

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            2.5

          • ID Max (A):

            0.115

          • PD Max (W):

            0.2

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            7500

          • RDS(on) Max @ VGS = 10 V(mΩ):

            7500

          • Qg Typ @ VGS = 10 V (nC):

            1

          • Ciss Typ (pF):

            20

          • Package Type:

            SOT-23-3

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          恩XP
          15+
          SOT23
          30000
          全新原裝
          詢價(jià)
          25+
          50
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          25+
          50
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          17+18+
          SOT23
          488459
          原廠原裝,本地現(xiàn)貨庫(kù)存,假一罰十!
          詢價(jià)
          長(zhǎng)電
          11+
          SOT23
          50000
          深圳現(xiàn)貨
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          恩XP
          24+/25+
          SOT236
          99000
          100%原裝正品真實(shí)庫(kù)存,支持實(shí)單
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          ON-SEMI
          22+
          N/A
          9000
          原裝正品 香港現(xiàn)貨
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          恩XP
          1118
          SOT236
          340
          現(xiàn)貨庫(kù)存,有單來(lái)談
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          恩XP
          25+
          7589
          全新原裝現(xiàn)貨,支持排單訂貨,可含稅開(kāi)票
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          恩XP
          16+
          SOT23
          12350
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          更多2N700供應(yīng)商 更新時(shí)間2021-9-16 14:01:00
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