絲?。?strong>20D；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 頁數(shù)：6 Pages

WTE

Won-Top Electronics

絲印：20D；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES For surface mounted applications in order to optimize board space. Low profile package Glass passivated junction Low inductance Plastic package has Underwriters Laboratory Flammability

文件：1.10473 Mbytes 頁數(shù)：7 Pages

SY

順燁電子

絲?。?strong>20D；Surface mount transient voltage suppressor power 200 watts

文件：1.51236 Mbytes 頁數(shù)：5 Pages

JUXING

廣東鉅興電子

絲?。?strong>20D；Package：SMAF；Surface mount transient voltage suppressor power 200 watts

文件：1.51387 Mbytes 頁數(shù)：5 Pages

JUXING

廣東鉅興電子

絲?。?a target="_blank" title="Marking" href="/20dn6c/marking.html">20DN6C；Package：SO8FL；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWD020N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

文件：254.21 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲印：20DN6W；Package：SO8FL；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? NVMFWD020N06C ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Hal

文件：254.21 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

絲印：20DN6C；Package：SO8FLDual；MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

文件：251.31 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

Radial Lead Varistor (MOV)

Features Wide operating voltages ranging from 11Vrms to 1100Vrms(AC) Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling capability. High energy absorption capability. Low clamping voltages, providing better surge protection Low c

文件：3.38517 Mbytes 頁數(shù)：7 Pages

UNSEMI

優(yōu)恩半導體

1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES

文件：119.01 Kbytes 頁數(shù)：3 Pages

IRF

1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES

文件：119.01 Kbytes 頁數(shù)：3 Pages

IRF