絲?。?strong>20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =20A RDS(ON)

文件：482.66 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?strong>20N60；Package：TO-220F-3L；N-Channel Power MOSFET

文件：530.17 Kbytes 頁數(shù)：6 Pages

E-CMOS

飛虹高科

絲?。?strong>20N60；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：325.79 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲印：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on?state conduction loss of a bipolar transistor. The much lower on?state voltage drop varies only mode

文件：388.62 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/20n60c3/marking.html">20N60C3；Package：TO-263-3；Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/20n60c3/marking.html">20N60C3；Package：TO-220-3-1；Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Worldwide best RDS(on) in TO 220 ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? High peak current capability ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：314.6 Kbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

絲印：20N60M2EP；Package：D2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in a D2PAK package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：475.9 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/20n60m2ep/marking.html">20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in an I2PAK package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：262.029 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/20n60m2ep/marking.html">20N60M2EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in a TO-247 package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：275.09 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲印：20N60A4；Package：TO-263AB；600V, SMPS Series N-Channel IGBTs

文件：908.79 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體