| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on?state conduction loss of a bipolar transistor. The much lower on?state voltage drop varies only mode 文件：388.62 Kbytes 頁數(shù)：10 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
20N60A4D | SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on?state conduction loss of a bipolar transistor. The much lower on?state voltage drop varies only mode 文件：388.62 Kbytes 頁數(shù)：10 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
20N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：157.02 Kbytes 頁數(shù)：9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD |
詳細(xì)參數(shù)
- 型號：
20N60A4D
- 功能描述：
IGBT 晶體管 600V
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHIL |
17+ |
TO-247 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
ON |
21+ |
TO-247 |
4500 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
ON |
24+ |
TO-247 |
9000 |
只做原裝 假一賠十 |
詢價 | ||
FAIRCHIL |
24+ |
TO-247 |
6500 |
全新原裝現(xiàn)貨,歡迎詢購!! |
詢價 | ||
FAIRCHILD/仙童 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
FAIRCHIL |
2025+ |
SOP |
3795 |
全新原裝、公司現(xiàn)貨熱賣 |
詢價 | ||
onsemi(安森美) |
25+ |
TO-247-3 |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
仙童 |
05+ |
TO-247 |
6000 |
原裝進口 |
詢價 | ||
FAIRCHIL |
24+ |
TO-247 |
8866 |
詢價 | |||
FAIRCHILD |
13+ |
TO247 |
2060 |
原裝分銷 |
詢價 |
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