絲?。?strong>10N10；Package：SPR-8PP；N-Channel Enhancement Mode Power MOSFET

文件：360.75 Kbytes 頁數(shù)：4 Pages

SECOS

喜可士

絲印：10N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features Vos =100Vl0 =10A Rosin)

文件：418.13 Kbytes 頁數(shù)：9 Pages

RECTRON

麗正國際

絲印：10N100；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The RM10N100S8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A RDS(ON)

文件：425.06 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/10n10g/marking.html">10N10G；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 100 V, 10.8 m, 83 A

文件：267.54 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：10N10AT；Package：SOP-8；100V N-Channel DTMOS

文件：791.93 Kbytes 頁數(shù)：7 Pages

WUMC

紫光國微

10A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 頁數(shù)：7 Pages

UTC

友順

10A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 頁數(shù)：7 Pages

UTC

友順

10A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 頁數(shù)：7 Pages

UTC

友順

10A, 1000V N-CHANNEL POWER MOSFET

? DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 頁數(shù)：7 Pages

UTC

友順

SIPMOS Power-Transistor

文件：787.36 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌