絲印：033；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：645.28 Kbytes 頁(yè)數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲?。?strong>033；Package：SOT-5X3；TPS61033 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features ? Input voltage range: 1.8 V to 5.5 V ? Output voltage range: 2.2 V to 5.5 V – When FB connect to VIN output voltage fixed 5.0 V ? Two valley switching current limit options – TPS61033: 5.5-A typical – TPS610333: 1.85-A typical ? High efficiency and power capability – Two 25-mΩ

文件：1.83771 Mbytes 頁(yè)數(shù)：28 Pages

TI

德州儀器

絲?。?strong>033；Package：SOT-5X3；TPS61033X 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features ? Input voltage range: 1.8 V to 5.5 V ? Output voltage range: 2.2 V to 5.5 V(TPS61033) – FB connects to VIN output voltage for fixed 5.0 V(TPS61033X) ? Two valley switching current limit options – TPS61033: 5.5-A typical – TPS610333: 1.85-A typical ? High efficiency and power ca

文件：1.85664 Mbytes 頁(yè)數(shù)：29 Pages

TI

德州儀器

絲印：033N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ? Dual-side cooled package with lowest Junction-top thermal resistance ? Optimized for synchronous rectification in server and desktop ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? 175°C rated ? Pb-free lead plating; RoHS compliant ? Halogen-free according to

文件：1.09223 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/033n03f2/marking.html">033N03F2；Package：PG-TO220-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：837.73 Kbytes 頁(yè)數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/033n04ns/marking.html">033N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：998.61 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/033n03f2/marking.html">033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.44799 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/033n03f/marking.html">033N03F；Package：PG-TSDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.26494 Mbytes 頁(yè)數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/03360ye/marking.html">03360YE；Package：SOT669；60 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? High thermal power dissipation capability ? Suitable for thermally demanding environments due to 175 °C ra

文件：274.78 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIA

安世

絲印：033N06NS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature ? RDS(ON), VGS@10V, ID@40A

文件：752.07 Kbytes 頁(yè)數(shù)：7 Pages

PANJIT

強(qiáng)茂