絲?。?strong>039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

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絲?。?a target="_blank" title="Marking" href="/039inbbx/marking.html">039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performanc

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絲?。?a target="_blank" title="Marking" href="/039inbba/marking.html">039INBBA；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1. General description The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior rel

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