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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SVT035R5NDTR

          絲印:035R5ND;Package:TO-252-2L;100A, 30V N-CHANNEL MOSFET

          DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:369.32 Kbytes 頁(yè)數(shù):9 Pages

          SILAN

          士蘭微

          SVT035R5NDTR

          絲?。?strong>035R5ND;Package:TO-252-2L;100A, 30V N-CHANNEL MOSFET

          DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:369.3 Kbytes 頁(yè)數(shù):9 Pages

          SILAN

          士蘭微

          SVT035R5NDTR

          絲印:035R5ND;Package:TO-252-2L;100A, 30V N-CHANNEL MOSFET

          DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:369.3 Kbytes 頁(yè)數(shù):9 Pages

          SILAN

          士蘭微

          SVT035R5NDTR

          絲印:035R5ND;Package:TO-252-2L;100A, 30V N-CHANNEL MOSFET

          DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:369.3 Kbytes 頁(yè)數(shù):9 Pages

          SILAN

          士蘭微

          035R5ND

          100A, 30V N-CHANNEL MOSFET

          DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

          文件:369.3 Kbytes 頁(yè)數(shù):9 Pages

          SILAN

          士蘭微

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          SILAN/士蘭微
          24+
          TO-252
          126000
          專營(yíng)SILAN士蘭微原裝保障
          詢價(jià)
          SILAN(士蘭微電子)
          25+
          封裝
          500000
          源自原廠成本,高價(jià)回收工廠呆滯
          詢價(jià)
          SILAN/士蘭微
          25+
          DFN
          10000
          原廠原裝,價(jià)格優(yōu)勢(shì)
          詢價(jià)
          SILAN/士蘭微
          25+
          PDFN5*6-8L
          188600
          全新原廠原裝正品現(xiàn)貨 歡迎咨詢
          詢價(jià)
          SILAN/士蘭微
          21+
          TO220
          38000
          詢價(jià)
          24+
          N/A
          80000
          一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
          詢價(jià)
          SILAN(士蘭微電子)
          2511
          5904
          電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià)
          詢價(jià)
          SILAN/士蘭微
          22+
          TO220
          20000
          只做原裝 品質(zhì)保障
          詢價(jià)
          SILAN
          37
          詢價(jià)
          SILAN
          24+
          con
          37
          現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
          詢價(jià)
          更多035R5ND供應(yīng)商 更新時(shí)間2026-1-18 9:35:00
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