絲印：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.44799 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

StrongIRFET ? 2 功率 MOSFET 30 V，采用 SuperSO8 5x6 封裝

Infineon’s StrongIRFET? 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.\n Compared to the previous technology, the ISC033N03LF2S achieves up to 40& ? General purpose products\n? Excellent robustness\n? Superior price/performance ratio\n? Broad availability at distributors\n? Standard packages and pin-out\n? High manufacturing & supply standards\n\n優(yōu)勢:\n? Addresses a wide range of applications\n? Reliable performance\n? High quality and competit;

Infineon

英飛凌

MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.26494 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：837.73 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌