N-Channel Enhancement-Mode

文件：969.26 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

ISO high side smart power solid state relay

文件：297.16 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導體

HIGH SIDE SMART POWER SOLID STATE RELAY

文件：219.67 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

HIGH SIDE SMART POWER SOLID STATE RELAY

文件：171.96 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

HIGH SIDE SMART POWER SOLID STATE RELAY

文件：171.96 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導體

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

ST

意法半導體

Package：Pentawatt-5（垂直，彎曲和錯列引線）；包裝：管件 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

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MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

Microchip

微芯科技

場效應管(MOSFET)

SILICONIX

Package：Pentawatt-5（直引線，交錯配接深度）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT

STMICROELECTRONICS

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