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          首頁 >VB30120S>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB30120S

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:228.42 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120S

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

          文件:165.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120S-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:216.68 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120S-E3

          Schotty Barrier Diode

          FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

          文件:321.01 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          VB30120SG

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3

          Low forward voltage drop, low power losses

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:156.84 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:216.01 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            VB30120S

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          DIOS
          23+
          SOT-23
          69820
          終端可以免費(fèi)供樣,支持BOM配單!
          詢價(jià)
          VISHAY/威世通
          22+
          TO-263
          6000
          十年配單,只做原裝
          詢價(jià)
          VISHAY
          25+
          TO-263
          12300
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價(jià)
          VISHAY
          25+23+
          TO-263
          15499
          絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          VISHAY/威世
          23+
          TO-263
          11200
          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價(jià)
          VISHAY/威世
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價(jià)
          VISHAY/威世
          23+
          TO-263
          6950
          實(shí)實(shí)在在-只做原裝正品
          詢價(jià)
          VISHAY
          24+
          N/A
          5000
          十年沉淀唯有原裝
          詢價(jià)
          VISHAY
          原廠封裝
          9800
          原裝進(jìn)口公司現(xiàn)貨假一賠百
          詢價(jià)
          更多VB30120S供應(yīng)商 更新時(shí)間2026-1-19 11:04:00
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