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          首頁 >VB30120SG>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB30120SG

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:154.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:158.13 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:216.01 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3

          Low forward voltage drop, low power losses

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:156.84 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3SLASH8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 2

          文件:168.27 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB30120SG-E3-4W

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:154.91 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細參數(shù)

          • 型號:

            VB30120SG

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

          供應(yīng)商型號品牌批號封裝庫存備注價格
          DIOS
          23+
          SOT-23
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          VISHAY/威世
          22+
          TO-263
          6000
          十年配單,只做原裝
          詢價
          VISHAY
          25+
          TO-263
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          VISHAY/威世
          23+
          TO-263
          11200
          原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          VISHAY/威世
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價
          VISHAY/威世
          2447
          TO-263
          100500
          一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
          詢價
          VISHAY/威世
          24+
          TO-263
          60000
          全新原裝現(xiàn)貨
          詢價
          Vishay Semiconductor Diodes Di
          23+
          TO263AB
          8000
          只做原裝現(xiàn)貨
          詢價
          Vishay
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          更多VB30120SG供應(yīng)商 更新時間2026-1-19 11:04:00
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