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          首頁(yè) >VB20150C-E3>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          VB20150C-E3

          Trench MOS Schottky technology

          Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10

          文件:161.22 Kbytes 頁(yè)數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3

          Dual High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

          文件:218.83 Kbytes 頁(yè)數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3

          Schotty Barrier Diode

          FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

          文件:314.45 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          VB20150C-E3

          Dual High Voltage Trench MOS Barrier Schottky Rectifier Low VF = 0.59 V at IF = 5 A

          Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

          Vishay

          威世

          VB20150C-E3/4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

          Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordanc

          文件:168.29 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3/8W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

          Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordanc

          文件:168.29 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3SLASH4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

          Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordanc

          文件:168.29 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3SLASH8W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

          Ultra Low VF = 0.59 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordanc

          文件:168.29 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3/4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:163.4 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150C-E3/8W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:163.4 Kbytes 頁(yè)數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            VB20150C-E3

          • 功能描述:

            肖特基二極管與整流器 20 Amp 150 Volt Dual TrenchMOS

          • RoHS:

          • 制造商:

            Skyworks Solutions, Inc.

          • 產(chǎn)品:

            Schottky Diodes

          • 峰值反向電壓:

            2 V

          • 正向連續(xù)電流:

            50 mA

          • 配置:

            Crossover Quad

          • 正向電壓下降:

            370 mV

          • 最大功率耗散:

            75 mW

          • 工作溫度范圍:

            - 65 C to + 150 C

          • 安裝風(fēng)格:

            SMD/SMT

          • 封裝/箱體:

            SOT-143

          • 封裝:

            Reel

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          VISHAY/威世
          2447
          TO-263
          100500
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
          詢價(jià)
          VIS
          22+
          TO-263AB
          6000
          十年配單,只做原裝
          詢價(jià)
          VISHAY/威世
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價(jià)
          VIS
          25+
          TO-263AB
          12300
          獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
          詢價(jià)
          VISHAY
          24+
          TO-263A
          80000
          只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開(kāi)13%增
          詢價(jià)
          VISHAY
          原廠封裝
          9800
          原裝進(jìn)口公司現(xiàn)貨假一賠百
          詢價(jià)
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢價(jià)
          Vishay(威世)
          23+
          NA
          20094
          正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
          詢價(jià)
          VISHAY
          23+
          TO263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          VISHAY/威世
          23+
          TO-263
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          更多VB20150C-E3供應(yīng)商 更新時(shí)間2026-1-18 15:01:00
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