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          首頁 >VB20100S>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB20100S

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

          文件:168.62 Kbytes 頁數:5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S

          High Voltage Trench MOS Barrier Schottky Rectifier

          文件:152.41 Kbytes 頁數:5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JES

          文件:157.77 Kbytes 頁數:6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

          文件:215.28 Kbytes 頁數:6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S-E3

          Schotty Barrier Diode

          FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

          文件:320.66 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          VB20100S-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

          文件:168.62 Kbytes 頁數:5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

          文件:168.62 Kbytes 頁數:5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

          文件:168.62 Kbytes 頁數:5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100S-E3SLASH8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2

          文件:168.62 Kbytes 頁數:5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20100SG

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Low thermal resistance ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

          文件:216.53 Kbytes 頁數:6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細參數

          • 型號:

            VB20100S

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

          供應商型號品牌批號封裝庫存備注價格
          FAIRCHILD/仙童
          23+
          TO-220
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          VISHAY
          23+
          TO-252
          50000
          全新原裝正品現貨,支持訂貨
          詢價
          VISHAY/威世
          22+
          TO-263
          6000
          十年配單,只做原裝
          詢價
          VISHAY
          25+
          TO-263
          12300
          獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
          詢價
          VISHAY
          原廠封裝
          9800
          原裝進口公司現貨假一賠百
          詢價
          Vishay/GeneralSemiconduc
          24+
          TO-263
          1600
          詢價
          General Semiconductor / Vishay
          2022+
          601
          全新原裝 貨期兩周
          詢價
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          VISHAY/威世
          23+
          11200
          原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
          詢價
          VISHAY
          15+
          TO-263
          1457
          一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
          詢價
          更多VB20100S供應商 更新時間2026-1-17 14:08:00
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