| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward volatge drop, low power losses ? 文件：111.06 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Superior Peak Surge Current Ratings in Small Disc Sizes Description The Littelfuse LV UltraMOV? Series of low voltage, high surge current, radial leaded varistors provides an ideal circuit protection solution for lower DC voltage applications by offering higher surge ratings than ever before available in such small discs. Features ? Breakthrough in 文件：778.6 Kbytes 頁數(shù)：2 Pages | LITTELFUSE 力特 | LITTELFUSE | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified 文件：91.72 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? - 文件：103.64 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? - 文件：103.64 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號：
V10
- 制造商：
VISHAY
- 制造商全稱：
Vishay Siliconix
- 功能描述：
DZ23-V
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
NA |
8486 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SOT23 |
83500 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
VISHAY |
23+ |
SOT-23 |
34142 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原裝正品,假一罰十! |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-23 |
120 |
原裝正品,假一罰十! |
詢價(jià) | ||
VISHAY |
24+ |
SOT-23 |
80000 |
只做自己庫存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
23+ |
SOT-23 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
24+ |
SOT-23 |
60000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
xx |
2023+環(huán)?，F(xiàn)貨 |
SOT-23 |
30000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
YANGJIE |
24+ |
SOT-23 |
50000 |
原廠直銷全新原裝正品現(xiàn)貨 歡迎選購 |
詢價(jià) |
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