SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The μPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The μPC8163TB has improved intermodulation performance and smaller package. The μPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip

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NEC

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SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

DESCRIPTION The μPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 (Ultra High Speed Process) silicon bipolar process. This IC is as same circuit current as conv

文件：79.01 Kbytes 頁數(shù)：7 Pages

NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Recommended operating frequency : fRFout = 0.8 to 2.5 GHz ? Higher IP3 : CG = 9.5 dB TYP., OIP3 = +7.5 dBm TYP. @ fRFout = 0.9 GHz ? High-density surface mounting : 6-pin super minimold package ? Supply voltage : VCC = 2.7 to 3.3 V

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? High output frequency : fRFout = 0.8 to 2.5 GHz ? High-density surface mounting : 6-pin super minimold package ? Supply voltage : VCC = 2.7 to 3.3 V ? Higher IP3 : OIP3 = +10 dBm @ fRFout = 1.9 GHz

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絲?。?a target="_blank" title="Marking" href="/c3a/marking.html">C3A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Recommended operating frequency : fRFout = 0.8 to 2.5 GHz ? Higher IP3 : CG = 9.5 dB TYP., OIP3 = +7.5 dBm TYP. @ fRFout = 0.9 GHz ? High-density surface mounting : 6-pin super minimold package ? Supply voltage : VCC = 2.7 to 3.3 V

文件：308.18 Kbytes 頁數(shù)：30 Pages

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SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

DESCRIPTION The μPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 (Ultra High Speed Process) silicon bipolar process. This IC is as same circuit current as conv

文件：79.01 Kbytes 頁數(shù)：7 Pages

NEC

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SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The μPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 ? wideband matched IC. This low current amplifier operates on 3.0

文件：154.32 Kbytes 頁數(shù)：7 Pages

NEC

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V ? Supply voltage : VCC = 2.4 to 3.3 V ? Excellent isolation : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz ? Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @

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絲印：C3B；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V ? Supply voltage : VCC = 2.4 to 3.3 V ? Excellent isolation : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz ? Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @

文件：418.8 Kbytes 頁數(shù)：30 Pages

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V ? Supply voltage : VCC = 2.4 to 3.3 V ? Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz ? Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @

文件：438.56 Kbytes 頁數(shù)：29 Pages

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