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          首頁 >UPA807>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          UPA807

          MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

          FEATURES ? Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz ? A Super Mini Mold Package Adopted ? Built-in 2 Transistors (2 × 2SC5179)

          文件:56.87 Kbytes 頁數:8 Pages

          NEC

          瑞薩

          UPA807

          MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

          Renesas

          瑞薩

          UPA807T

          SILICON TRANSISTOR

          MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES ? Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz ? A Super Mini Mold Package Adopted ? Bu

          文件:273.74 Kbytes 頁數:10 Pages

          RENESAS

          瑞薩

          UPA807T

          MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

          FEATURES ? Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz ? A Super Mini Mold Package Adopted ? Built-in 2 Transistors (2 × 2SC5179)

          文件:56.87 Kbytes 頁數:8 Pages

          NEC

          瑞薩

          UPA807T-T1

          MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

          FEATURES ? Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz ? A Super Mini Mold Package Adopted ? Built-in 2 Transistors (2 × 2SC5179)

          文件:56.87 Kbytes 頁數:8 Pages

          NEC

          瑞薩

          UPA807T-T1

          SILICON TRANSISTOR

          MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES ? Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz ? A Super Mini Mold Package Adopted ? Bu

          文件:273.74 Kbytes 頁數:10 Pages

          RENESAS

          瑞薩

          UPA807T

          NPN SILICON HIGH FREQUENCY TRANSISTOR

          文件:252.11 Kbytes 頁數:12 Pages

          CEL

          UPA807T-T1-A

          NPN SILICON HIGH FREQUENCY TRANSISTOR

          文件:252.11 Kbytes 頁數:12 Pages

          CEL

          UPA807T

          NPN SILICON HIGH FREQUENCY TRANSISTOR

          CEL

          詳細參數

          • 型號:

            UPA807

          • 制造商:

            NEC

          • 制造商全稱:

            NEC

          • 功能描述:

            MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

          供應商型號品牌批號封裝庫存備注價格
          NEC
          24+
          SOT-363/SOT-323-6
          8230
          新進庫存/原裝
          詢價
          NEC
          17+
          SOT-363
          6200
          100%原裝正品現貨
          詢價
          原廠正品
          23+
          SOT363
          33000
          原裝正品,假一罰十
          詢價
          NEC
          24+
          5000
          只做原裝公司現貨
          詢價
          NEC
          1701+
          SOT363
          21000
          只做原裝進口,假一罰十
          詢價
          NEC
          22+
          SOT363
          8200
          全新進口原裝現貨
          詢價
          NEC
          2900
          全新原裝 貨期兩周
          詢價
          MINI
          24+
          SMD其他電子元
          17
          一級代理全新原裝現貨
          詢價
          N/A
          23+
          NA
          2676
          專做原裝正品,假一罰百!
          詢價
          NEC
          25+23+
          SOT-363
          43065
          絕對原裝正品現貨,全新深圳原裝進口現貨
          詢價
          更多UPA807供應商 更新時間2026-1-18 16:00:00
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