Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

文件：208.74 Kbytes 頁(yè)數(shù)：14 Pages

RENESAS

瑞薩

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. Th

文件：72.41 Kbytes 頁(yè)數(shù)：10 Pages

NEC

瑞薩

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. Th

文件：72.41 Kbytes 頁(yè)數(shù)：10 Pages

NEC

瑞薩

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES ? Input offset voltage ±3 mV MAX. ? Slew rate 5.5 V/μ s TYP. ? Unity gain frequency 2.8 MHz TYP. ? Low power ICC ≤ 2.2 mA MAX. (Reduces circuit currents while maintaining relatively high slew rate and bandwidth) ? High stability is secured to capacitive loads (4000 pF, AV = +1) ?

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RENESAS

瑞薩

SCHOTTKY BARRIER RECTIFIER 8 AMP 35 VOLT

SURFACE MOUNT POWERMITE? 3 Surface Mount Power Package Features ? Low Profile – Maximum height of 1.1 mm ? Footprint Area of 16.51 mm ? Low VF Provides Higher Efficiency ? Supplied in 16mm Tape and Reel – 6000 units/reel ? Low Thermal Resistance with Direct Thermal Path of Die on Exposed Ca

文件：54.62 Kbytes 頁(yè)數(shù)：2 Pages

MICROSEMI

美高森美

SCHOTTKY BARRIER RECTIFIER 8 AMP 35 VOLT

文件：488.19 Kbytes 頁(yè)數(shù)：2 Pages

MICROSEMI

美高森美