NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The μPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES ? Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA ? High gain Q1 : |

文件：79.54 Kbytes 頁數(shù)：11 Pages

NEC

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The μPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES ? Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA ? High gain Q1 : |

文件：79.54 Kbytes 頁數(shù)：11 Pages

NEC

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：16.72 Kbytes 頁數(shù)：2 Pages

NEC

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：16.72 Kbytes 頁數(shù)：2 Pages

NEC

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION\nThe UPA836TC contains one NE685 and one NE688 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configure ? SMALL PACKAGE OUTLINE:\n1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package\n? LOW HEIGHT PROFILE:\nJust 0.55 mm high\n? FLAT LEAD STYLE:\nReduced lead inductance improves electrical performance\n? TWO DIFFERENT DIE TYPES:\nQ1 - Ideal oscillator transistor\nQ2 - Ideal buffer amplifi;

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

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