NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The μPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? Fla

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The μPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? High Gain |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? A Small Mini Mold Package A

文件：223.98 Kbytes 頁數：8 Pages

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NPN SILICON RF TWIN TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ′ 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES ? Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA ? High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA ? Flat-lead 6-pin thin-type ultra super

文件：194.51 Kbytes 頁數：14 Pages

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NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The μPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? Fla

文件：53.62 Kbytes 頁數：12 Pages

NEC

瑞薩

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The μPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? High gain: |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? Fla

文件：53.62 Kbytes 頁數：12 Pages

NEC

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing compo nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for

文件：15.4 Kbytes 頁數：1 Pages

NEC

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The μPA810T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? High Gain |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE= 3 V, IC= 7 mA ? A Small Mini Mold Package A

文件：223.98 Kbytes 頁數：8 Pages

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

The μPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA ? High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA ? A Small Mini Mold

文件：49.15 Kbytes 頁數：6 Pages

NEC

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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

The μPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA ? High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA ? A Small Mini Mold

文件：49.15 Kbytes 頁數：6 Pages

NEC

瑞薩

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The μPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES ? Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA ? High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA ? A Small Mini Mold

文件：219.4 Kbytes 頁數：8 Pages

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