| 序號(hào) | 型號(hào) | 極限工作電壓 | 最大電流允許值 | 最大耗散功率 | 放大倍數(shù) | 最大工作頻率 | 制作材料 |
|---|---|---|---|---|---|---|---|
| 1 | GES5368...5375 | 60V | 0.5A | 0.36W | <1MHZ或未知 | Si-N/P | |
| 2 | GES5368...5375 | 60V | 0.5A | 0.36W | <1MHZ或未知 | Si-N/P | |
| 3 | GES5368...5375 | 60V | 0.5A | 0.36W | <1MHZ或未知 | Si-N/P | |
| 4 | GES5368...5375 | 60V | 0.5A | 0.36W | <1MHZ或未知 | Si-N/P | |
| 5 | GES5368...5375 | 60V | 0.5A | 0.36W | <1MHZ或未知 | Si-N/P | |
| 6 | GES5368...5375 | 40V | 0.5A | 0.36W | <1MHZ或未知 | Si-N/P | |
| 7 | GES5370 | 60V | 0.5A | 0.36W | <1MHZ或未知 | ||
| 8 | GES5447 | 40V | 0.2A | 0.36W | <1MHZ或未知 | ||
| 9 | GES5447...5451 | 40V | 0.2A | 0.3W | >100MHZ | Si-N/P | |
| 10 | GES5447...5451 | 50V | 0.2A | 0.3W | >100MHZ | Si-N/P | |
| 11 | GES5447...5451 | 50V | 0.8A | 0.36W | >100MHZ | Si-N/P | |
| 12 | GES5447...5451 | 50V | 0.8A | 0.36W | >100MHZ | Si-N/P | |
| 13 | GES5447...5451 | 50V | 0.8A | 0.36W | >100MHZ | Si-N/P | |
| 14 | GES5810 | 35V | 0.75A | 0.5W | <1MHZ或未知 | ||
| 15 | GES5810 | 35V | 0.75A | 0.5W | β>60 | >100MHZ | Si-N/P |
| 16 | GES5811 | 35V | 0.75A | 0.5W | β>60 | >100MHZ | Si-N/P |
| 17 | GES5812 | 35V | 0.75A | 0.5W | β>150 | >135MHZ | Si-N/P |
| 18 | GES5813 | 35V | 0.75A | 0.5W | β>150 | >135MHZ | Si-N/P |
| 19 | GES5814 | 50V | 0.75A | 0.5W | β>60 | >100MHZ | Si-N/P |
| 20 | GES5815 | 50V | 0.75A | 0.5W | β>60 | >100MHZ | Si-N/P |
| 21 | GES5816 | 50V | 0.75A | 0.5W | β>100 | >120MHZ | Si-N/P |
| 22 | GES5817 | 50V | 0.75A | 0.5W | β>100 | >120MHZ | Si-N/P |
| 23 | GES5818 | 50V | 0.75A | 0.5W | β>150 | >135MHZ | Si-N/P |
| 24 | GES5819 | 50V | 0.75A | 0.5W | β>150 | >135MHZ | Si-N/P |
| 25 | GES5820 | 70V | 0.75A | 0.5W | β>60 | >100MHZ | Si-N/P |
| 26 | GES5821 | 70V | 0.75A | 0.5W | β>60 | >100MHZ | Si-N/P |
| 27 | GES5822 | 70V | 0.75A | 0.5W | β>100 | >120MHZ | Si-N/P |
| 28 | GES5823 | 70V | 0.75A | 0.5W | β>100 | >120MHZ | Si-N/P |
| 29 | GES5825 | 50V | 0.36W | <1MHZ或未知 | |||
| 30 | GES6000 | 35V | 0.5A | 0.4W | <1MHZ或未知 |

