| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/tph9r00cq5/marking.html">TPH9R00CQ5；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) Fast reverse recovery time : trr = 40 ns (typ.) (2) Small reverse recovery charge : Qrr = 34 nC (typ.) (3) Small gate charge: QSW = 11.7 nC (typ.) (4) Low drain-source on-resistanc 文件：638.3 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tph9r00cqh/marking.html">TPH9R00CQH；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 11.7 nC (typ.) (3) Small output charge: Qoss = 87 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.3 mΩ (typ.) (VGS = 10 文件：653.87 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tph9r506pl/marking.html">TPH9R506PL；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 6.6 nC (typ.) (3) Small output charge: Qoss = 18 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.3 mΩ (typ.) (VGS = 10 V 文件：455.87 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Thru-Line THE BIG DEAL Low loss, less than 1 dB max at 20 GHz Return loss, 14 dB typical below 20 GHz Standard 1812 (4.5mm x 3.2mm) case style Suited for very high-volume production APPLICATIONS Test and Measurement EW, Radar and ECM Defense Systems 5G MIMO and Back Haul Radio Satellite Communica 文件：508.17 Kbytes 頁數(shù)：4 Pages | MINI | MINI | ||
絲?。?a target="_blank" title="Marking" href="/tphr6503pl/marking.html">TPHR6503PL；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V) (5) Low leak 文件：604.55 Kbytes 頁數(shù)：10 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon N-channel MOS (U-MOS-H) 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V) (5) Lo 文件：593.17 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon N-channel MOS (U-MOS-H) 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ.) (3) Small output charge: Qoss = 90 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.51 mΩ (typ.) (VGS 文件：533.82 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon N-channel MOS (U-MOS-H) 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ.) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.7 mΩ (typ.) (VGS 文件：599.8 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tphr9003nc/marking.html">TPHR9003NC；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? ORing Circuits ? Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V) (2) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) 文件：255.72 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：TPHR9003NL1；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 16 nC (typ.) (3) Small output charge: Qoss = 74 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.77 mΩ (typ.) (VGS = 10 V) (5) Low leakag 文件：485.37 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA |
技術(shù)參數(shù)
- 輸入電壓(V）：
3.3
- 輸出電壓(V）：
3.3
- 封裝：
DIP
- 輸出路數(shù)：
1
- 隔離電壓(VAC）：
3000
- 封裝尺寸(mm）：
19.50*7.5*10.0
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
17+ |
QFN8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
24+ |
QFN8 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
SIX |
25+ |
SOP8S |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來電! |
詢價(jià) | ||
TOSHIBA |
24+ |
QFN8 |
10000 |
原廠/代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TRANS |
25+23+ |
TO-220 |
23829 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
SOP8 |
6688 |
15 |
現(xiàn)貨庫存 |
詢價(jià) | ||
TOSHIBA |
19+ |
SOP-8 |
20000 |
只做原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
TOSHIBA |
24+ |
SOP |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價(jià) | ||
TOSHIBA |
2019+ |
DFN-8 |
50000 |
原裝正品,誠信經(jīng)營(yíng)。 |
詢價(jià) | ||
3PEAK |
23+ |
SOP8 |
30000 |
原裝正品,假一罰十 |
詢價(jià) |
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