絲?。?a target="_blank" title="Marking" href="/tph1r405pl/marking.html">TPH1R405PL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 67 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1 mΩ (typ.) (VGS = 10 V) (5

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絲?。?a target="_blank" title="Marking" href="/tph1r712md/marking.html">TPH1R712MD；Package：SOP；MOSFETs Silicon P-Channel MOS

Applications ? Lithium-Ion Secondary Batteries ? Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)

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絲?。?a target="_blank" title="Marking" href="/tph2010fnh/marking.html">TPH2010FNH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 168 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (

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5-V, G = 7 Stable, 8-GHz, High-Speed Op Amp

Features ? Supply Voltage: 3.3 V to 5.25 V ? High Gain Bandwidth Product: 8 GHz ? High Slew Rate: 2700 V/μs ? Offset Voltage: ±1.2 mV at 25°C (Max) ? Stable when Gain > 7 V/V ? Quiescent Current: 19 mA ? Overload Recovery: 2.8 ns ? Package: DFN2X2-8 ? Operating Temperature Range: –40°C to

文件：1.49725 Mbytes 頁數：18 Pages

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絲印：TPH2900ENH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5

文件：262.93 Kbytes 頁數：9 Pages

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絲印：TPH2R003PL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 41 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.3 mΩ (typ.) (VGS = 10 V)

文件：461.43 Kbytes 頁數：9 Pages

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絲?。?a target="_blank" title="Marking" href="/tph2r104pl/marking.html">TPH2R104PL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ.) (3) Small output charge : Qoss = 46 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =1.6 mΩ (typ.)(VGS = 10 V )

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絲印：TPH2R306NH；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (5)

文件：395.09 Kbytes 頁數：10 Pages

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絲?。?a target="_blank" title="Marking" href="/tph2r306nh1/marking.html">TPH2R306NH1；Package：SOP；MOSFETs Silicon N-channel MOS

Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Small output charge: Qoss = 91 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

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Silicon N-channel MOS (U-MOS-H)

1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge : QSW = 19 nC (typ.) (3) Small output charge : Qoss = 51 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =1.7 mΩ (typ.)(VGS

文件：675.84 Kbytes 頁數：9 Pages

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