| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：TPH4R10ANL；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge : QSW = 21 nC (typ.) (3) Small output charge : Qoss = 74 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =3.3 mΩ (typ.)(VGS = 10 V ) 文件：614.54 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tph4r50anh1/marking.html">TPH4R50ANH1；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 79 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) 文件：488.18 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：TPH4R606NH；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? Switching Voltage Regulators ? Motor Drivers ? DC-DC Converters Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 19 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) (5) Low 文件：232.72 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：TPH4R803PL；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 5.2 nC (typ.) (3) Small output charge: Qoss = 14 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V 文件：474.13 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tph5200fnh/marking.html">TPH5200FNH；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (5 文件：261.6 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
N-Channel MOSFET FEATURES ·Drain Current -ID=26A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 52mΩ(Max)@VGS= 10V APPLICATIONS ·Switching Voltage Regulators ·DC-DC converter 文件：384.66 Kbytes 頁(yè)數(shù)：3 Pages | ISC 無(wú)錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/tph5900cnh/marking.html">TPH5900CNH；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 50 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) (5 文件：227.01 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Silicon N-channel MOS (U-MOS-H) 1. Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators ? Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 14 nC (typ.) (3) Small output charge: Qoss = 46 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.7 mΩ (typ.) (VGS = 文件：813.2 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲?。?a target="_blank" title="Marking" href="/tph5r906nh/marking.html">TPH5R906NH；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? Switching Voltage Regulators ? Motor Drivers ? DC-DC Converters Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: QSW = 18 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = 10 V) (5) Low 文件：230.84 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
絲印：TPH6400ENH；Package：SOP；MOSFETs Silicon N-channel MOS Applications ? High-Efficiency DC-DC Converters ? Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 4.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 54 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 200 V) (5 文件：227.16 Kbytes 頁(yè)數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA |
技術(shù)參數(shù)
- 輸入電壓(V）：
3.3
- 輸出電壓(V）：
3.3
- 封裝：
DIP
- 輸出路數(shù)：
1
- 隔離電壓(VAC）：
3000
- 封裝尺寸(mm）：
19.50*7.5*10.0
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
17+ |
QFN8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
24+ |
QFN8 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
SIX |
25+ |
SOP8S |
3629 |
原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電! |
詢價(jià) | ||
TOSHIBA |
24+ |
QFN8 |
10000 |
原廠/代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
TRANS |
25+23+ |
TO-220 |
23829 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
TOSHIBA |
SOP8 |
6688 |
15 |
現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
TOSHIBA |
19+ |
SOP-8 |
20000 |
只做原裝正品優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
TOSHIBA |
24+ |
SOP |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！ |
詢價(jià) | ||
TOSHIBA |
2019+ |
DFN-8 |
50000 |
原裝正品,誠(chéng)信經(jīng)營(yíng)。 |
詢價(jià) | ||
3PEAK |
23+ |
SOP8 |
30000 |
原裝正品,假一罰十 |
詢價(jià) |
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