TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications ? Low drain-source ON resistance: RDS (ON) = 60 m? (typ.) ? High forward transfer admittance: |Yfs| = 5.9 S (typ.) ? Low leakage current: IDSS = ?10 μA (max) (VDS = ?30 V) ? Enhancement model: Vth = ?0.8 to ?2.0 V, (VDS = ?10 V, ID = ?1

文件：260.7 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Power MOSFET (P-ch dual)

Polarity：P-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID -3.2 A \nDrain current (Q2) ID -3.2 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS -30 V \nDrain-Source voltage (Q2) VDSS -30 V ;

Toshiba

東芝

Low Skew, 1-to-4 LVCMOS/LVTTL Fanout Buffer

文件：154.6 Kbytes 頁數(shù)：11 Pages

IDT

RS-232, Low Cap, #22-4pr, SR-PVC, O/A FoilBraid, PVC Jkt, CMG

Product Description Computer EIA RS-232 Cable, 22 AWG stranded (7x30) tinned copper conductors, semi-rigid PVC insulation, 4 twisted pairs, overall Beldfoil? (100 coverage) + tinned copper braid shield (65 coverage), PVC jacket.

文件：201.65 Kbytes 頁數(shù)：2 Pages

BELDEN

百通

Wire-Thread-Inserts

文件：102.37 Kbytes 頁數(shù)：3 Pages

V-COIL