Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

MOSFETs Silicon P-Channel MOS (U-MOS)

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TOSHIBA

東芝

Power MOSFET (P-ch single)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID -6 A \nPower Dissipation PD 2.5 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-12 V ;

Toshiba

東芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON resistance: RDS (ON) = 9.6 m? (typ.) ? High forward transfer admittance: |Yfs| = 23 S (typ.) ? Low leakage current: IDSS = ?10 μA (m

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TOSHIBA

東芝

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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TOSHIBA

東芝

SONET/SDH Transceivers

The TQ8105/TQ8106 are SONET/SDH transceivers that integrate multiplexing, demultiplexing, SONET/SDH framing, clock-synthesis PLL, and enhanced line and clock diagnostic functions into a single monolithic device. The TQ8106 is a pin-compatible upgrade of the TQ8105 that includes a Clock and Data Re

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