TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications ? Low drain-source ON resistance: RDS (ON) = 44 m? (typ.) ? High forward transfer admittance: |Yfs| = 6.2 S (typ.) ? Low leakage current: IDSS = ?10 μA (max) (VDS = ?20 V) ? Enhancement mode: Vth = ?0.5 to ?1.2 V

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Power MOSFET (P-ch dual)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current (Q1) ID -3 A \nDrain current (Q2) ID -3 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS -20 V \nDrain-Source voltage (Q2) VDSS -20 V ;

Toshiba

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) ? High forward transfer admittance: |Yfs| = 14 S (typ.) ? Low leakage current: IDSS = ?10 μA (max

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Silicon P Channel MOS Type (U-MOS??

文件：272.86 Kbytes 頁數(shù)：7 Pages

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

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