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          首頁 >TP21>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TP21

          MINIATURE SMD PROGRAMMABLE OSCILLATOR (2.0 x 1.6 x 0.75mm)

          FEATURES: ? CMOS PROGRAMMABLE OSCILLATOR ? MINITURE SMD PACKAGE WITH CMOS OUTPUT

          文件:304.23 Kbytes 頁數(shù):1 Pages

          TRANSKO

          TP2104

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數(shù):4 Pages

          SUTEX

          TP2104

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數(shù):6 Pages

          SUTEX

          TP2104

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數(shù):6 Pages

          SUTEX

          TP2104K1

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數(shù):4 Pages

          SUTEX

          TP2104K1-G

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數(shù):6 Pages

          SUTEX

          TP2104N3

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數(shù):4 Pages

          SUTEX

          TP2104N3-G

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數(shù):6 Pages

          SUTEX

          TP2104N3-G

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數(shù):6 Pages

          SUTEX

          TP2104ND

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數(shù):4 Pages

          SUTEX

          技術參數(shù)

          • BVdss min (V):

            -40

          • Rds (on) max (Ohms):

            6

          • Vgs(th) max (V):

            -2.0

          • CISSmax (pF):

            60

          • Packages:

            3\\SOT-233\\TO-92

          供應商型號品牌批號封裝庫存備注價格
          TRIPATH
          04/05+
          TLQFP-64
          199
          全新原裝100真實現(xiàn)貨供應
          詢價
          3PEAK思瑞浦
          2015+
          SOIC
          26898
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          DIPSOP
          1000
          原裝長期供貨!
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          TRIPATH
          2016+
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          6000
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          25+
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          原廠封裝
          3050
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          23+
          QFP
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          SUPERTEX
          24+
          TO-92
          4820
          只做原裝正品
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          SUPERTEX
          24+
          SOT-23
          5000
          只做原裝公司現(xiàn)貨
          詢價
          更多TP21供應商 更新時間2026-1-19 15:48:00
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