| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TP2104 | P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:455.81 Kbytes 頁數:4 Pages | SUTEX | SUTEX | |
TP2104 | P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:579.68 Kbytes 頁數:6 Pages | SUTEX | SUTEX | |
TP2104 | P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:579.68 Kbytes 頁數:6 Pages | SUTEX | SUTEX | |
TP2104 | MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature High input impedance and high gain \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nFree from secondary breakdown; | Microchip 微芯科技 | Microchip | |
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:455.81 Kbytes 頁數:4 Pages | SUTEX | SUTEX | ||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:579.68 Kbytes 頁數:6 Pages | SUTEX | SUTEX | ||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:455.81 Kbytes 頁數:4 Pages | SUTEX | SUTEX | ||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:579.68 Kbytes 頁數:6 Pages | SUTEX | SUTEX | ||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:579.68 Kbytes 頁數:6 Pages | SUTEX | SUTEX | ||
P-Channel Enhancement-Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in 文件:455.81 Kbytes 頁數:4 Pages | SUTEX | SUTEX |
技術參數
- BVdss min (V):
-40
- Rds (on) max (Ohms):
6
- Vgs(th) max (V):
-2.0
- CISSmax (pF):
60
- Packages:
3\\SOT-233\\TO-92
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Supertex |
19+ |
SOT-23 |
200000 |
詢價 | |||
Supertex |
20+ |
SOT-23 |
36800 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Supertex |
24+ |
SOT-23 |
45000 |
原裝現貨假一賠十 |
詢價 | ||
Supertex |
SOT-23 |
45000 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
Supertex |
2025+ |
SOT-23 |
7695 |
全新原廠原裝產品、公司現貨銷售 |
詢價 | ||
Supertex |
24+ |
SOT-23 |
18800 |
絕對原裝進口現貨 假一賠十 價格優(yōu)勢! |
詢價 | ||
SUP |
24+ |
原廠封裝 |
3050 |
原裝現貨假一罰十 |
詢價 | ||
supertexin |
23+ |
SOP+ |
5000 |
原裝正品,假一罰十 |
詢價 | ||
SUPERTEX |
24+ |
TO-92 |
4820 |
只做原裝正品 |
詢價 | ||
Microchip |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 |
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