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          首頁 >TP2104>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TP2104

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數:4 Pages

          SUTEX

          TP2104

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數:6 Pages

          SUTEX

          TP2104

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數:6 Pages

          SUTEX

          TP2104

          MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm

          This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature High input impedance and high gain \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nFree from secondary breakdown;

          Microchip

          微芯科技

          TP2104K1

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數:4 Pages

          SUTEX

          TP2104K1-G

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數:6 Pages

          SUTEX

          TP2104N3

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數:4 Pages

          SUTEX

          TP2104N3-G

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數:6 Pages

          SUTEX

          TP2104N3-G

          P-Channel Enhancement Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:579.68 Kbytes 頁數:6 Pages

          SUTEX

          TP2104ND

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

          文件:455.81 Kbytes 頁數:4 Pages

          SUTEX

          技術參數

          • BVdss min (V):

            -40

          • Rds (on) max (Ohms):

            6

          • Vgs(th) max (V):

            -2.0

          • CISSmax (pF):

            60

          • Packages:

            3\\SOT-233\\TO-92

          供應商型號品牌批號封裝庫存備注價格
          Supertex
          19+
          SOT-23
          200000
          詢價
          Supertex
          20+
          SOT-23
          36800
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          Supertex
          24+
          SOT-23
          45000
          原裝現貨假一賠十
          詢價
          Supertex
          SOT-23
          45000
          一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
          詢價
          Supertex
          2025+
          SOT-23
          7695
          全新原廠原裝產品、公司現貨銷售
          詢價
          Supertex
          24+
          SOT-23
          18800
          絕對原裝進口現貨 假一賠十 價格優(yōu)勢!
          詢價
          SUP
          24+
          原廠封裝
          3050
          原裝現貨假一罰十
          詢價
          supertexin
          23+
          SOP+
          5000
          原裝正品,假一罰十
          詢價
          SUPERTEX
          24+
          TO-92
          4820
          只做原裝正品
          詢價
          Microchip
          24+
          NA
          3000
          進口原裝正品優(yōu)勢供應
          詢價
          更多TP2104供應商 更新時間2026-1-18 15:14:00
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