功率 MOSFET，N 溝道，SUPERFET? II，F(xiàn)RFET?，650 V，35 A，110 mΩ，D2-PAK

SuperFET? II MOSFET 是飛兆利用電荷平衡技術(shù)實(shí)現(xiàn)出色的低導(dǎo)通電阻和更低柵極電荷性能的全新高壓超級(jí)結(jié) (SJ) MOSFET 系列產(chǎn)品。SuperFET? II FRFET? MOSFET 集更快速、更耐用的固有體二極管性能與快速開關(guān)性能于一身，旨在實(shí)現(xiàn)更佳可靠性和效率，在諧振開關(guān)應(yīng)用中尤其如此。SuperFET? II FRFET? 非常適合開關(guān)電源應(yīng)用，如服務(wù)器/電信電源、光伏逆變器、FPD 電視電源、電腦電源、照明及工業(yè)電源應(yīng)用。 ?700 V @TJ= 150°C\n?典型值RDS(on)=96 mΩ（典型值）\n?超低柵極電荷（典型值Qg=98 nC）\n?低有效輸出電容（典型值Coss(eff.)= 464 pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

絲印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

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N-Channel SuperFET? II FRFET? MOSFET

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：331.49 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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