N-Channel SuperFET? II FRFET? MOSFET

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：371.17 Kbytes 頁數(shù)：2 Pages

ISC

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功率 MOSFET，N 溝道，SUPERFET? II，F(xiàn)RFET?，650 V，35 A，110 mΩ，TO-247

SuperFET? II MOSFET 是 Fairchild 利用電荷平衡技術實現(xiàn)出色的低導通電阻和更低柵極電荷性能的全新高壓超級結（SJ）MOSFET 系列產(chǎn)品。 這項技術專用于最小化導通損耗并提供卓越的開關性能、dv/dt 額定值和更高雪崩能量。 因此，SuperFET MOSFET 非常適合開關電源應用，如功率因數(shù)校正(PFC)、服務器/電信電源、平板電視電源、ATX 電源及工業(yè)電源應用。 SuperFET II FRFET? MOSFET 優(yōu)化體二極管的反向恢復性能可去除額外元件并提高系統(tǒng)可靠性。 ?700 V @ TJ = 150°C\n?典型值 RDS(on)=96 mΩ（典型值）\n?超低柵極電荷（典型值 Qg = 98 nC)\n?低有效輸出電容（典型值 Coss(eff.) = 308 pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標準;

ONSEMI

安森美半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：331.49 Kbytes 頁數(shù)：2 Pages

ISC

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N-Channel SuperFET? II FRFET? MOSFET

Description SuperFET? II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

文件：709.12 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.35V@IC=110A ·High Current Handling Capability ·High Power Density ·Short Circuit Capabiltiy APPLICATIONS ·Synchronous Rectification in SMPS ·Power Inverters ·UPS,PFC ·High Frequency Power Inverters

文件：334.52 Kbytes 頁數(shù)：4 Pages

ISC

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