SiGe NPN Transistor

□ Features o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz o GP = 8.5 dB at f = 900 MHz □ Applications o VHF and UHF band medium power amplifier

文件：224.85 Kbytes 頁數(shù)：7 Pages

AUK

NPN SiGe RF POWER TRANSISTOR

NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application. □ FEATURES o 4.8 Volt op

文件：89.73 Kbytes 頁數(shù)：7 Pages

TACHYONICS

SiGe NPN Transistor

Kodenshi-AUK

NPN SiGe RF POWER TRANSISTOR

文件：324.01 Kbytes 頁數(shù)：11 Pages

TACHYONICS

5-V, 15-MHz GBW, Zero-Drift Operational Amplifiers

Features ? Supply Voltage: 2.5 V to 5.5 V ? Offset Voltage: ±10 μV Maximum within Temperature Range from ?40°C to 125°C ? Offset Voltage Drift: 0.013 μV/°C ? Rail-to-Rail Input and Output ? Bandwidth: 15 MHz ? Slew Rate: 7 V/μs ? Low Noise: 10 nV/√Hz at 1 kHz Applications ? Server PSU ?

文件：1.88835 Mbytes 頁數(shù)：22 Pages

3PEAK

思瑞浦

3-PHASE BRIDGE POWER DMOS ARRAY

文件：228.97 Kbytes 頁數(shù)：13 Pages

TI

德州儀器