SiGe NPN Transistor

□ Features - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz □ Applications - VHF and UHF power amplifier

文件：543.67 Kbytes 頁數(shù)：6 Pages

AUK

NPN SiGe RF POWER TRANSISTOR

□ Features - High power gain MAG = 15 dB @ VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) @ VCE = 6 V, ICQ = 50 mA, f = 465 MHz □ Applications - UHF and VHF wide band amplifier

文件：253.73 Kbytes 頁數(shù)：6 Pages

TACHYONICS

SiGe NPN Transistor

Kodenshi-AUK

FLOATING POINT DIGITAL SIGNAL PROCESSOR

文件：862.88 Kbytes 頁數(shù)：64 Pages

TI

德州儀器

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

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28V Operation High Speed Voltage Regulators with Stand-by Function

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特瑞仕