SiGe NPN Transistor

□ Features - Medium power(800mW, 1W) application - Power gain GP = 14 dB at VCE = 3.6 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 4.5 V, f = 460 MHz, PIN = 0 dBm GP = 15 dB at VCE = 6.0 V, f = 460 MHz, PIN = 0 dBm GP = 16 dB at VCE = 3.0 V, f = 434 MHz, PIN = 0 dBm - Output

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AUK

SiGe NPN Transistor

Kodenshi-AUK

Photocouplers GaA?As Infrared LED & Photo IC

Applications ? Induction Cooktop and Home Appliances ? Industrial Inverters ? Air Conditioner Inverters ? MOSFET Gate Drivers ? IGBT Gate Drivers General The TLP5702 is a photocoupler in a 6-pin SO6L package that consists of a GaA?As infrared light-emitting diode (LED) optically coupled

文件：1.03181 Mbytes 頁數(shù)：21 Pages

TOSHIBA

東芝

Photocouplers Infrared LED & Photo IC

Applications ? Photovoltaic (PV) Power Conditioning Systems ? Industrial Inverters ? Induction Cooktop and Home Appliances ? Air Conditioner Inverters ? MOSFET Gate Drivers ? IGBT Gate Drivers General The TLP5702H is a photocoupler in a 6-pin SO6L package that consists of an infrared LED

文件：978.86 Kbytes 頁數(shù)：18 Pages

TOSHIBA

東芝

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The μPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

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CEL