Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

RODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (m?) Max 20 4A 75 @ VGS=2.5V 60 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (m?) Max -20V -2.5A 190 @ VGS=-2.5V 138 @ VGS=-4.5V

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SAMHOP

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N- and P-Channel 20V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

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VBSEMI

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Mosfets

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Transistor Silicon PNP Epitaxial Type

文件：165.12 Kbytes 頁數(shù)：5 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

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4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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