Dual N-channel 30 V, 0.0155 廓, 10 A, SO-8 STripFET??V Power MOSFET

文件：775.95 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導體

N-Channel 0-V (D-S) MOSFET

文件：935.1 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-Channel MOSFET uses advanced trench technology

文件：1.43694 Mbytes 頁數(shù)：4 Pages

DOINGTER

杜因特

雙路N溝道30 V、0.0155 Ohm典型值、10 A STripFET(TM) V功率MOSFET，SO-8封裝

This STripFET?V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. ? RDS(on) * Qg industry benchmark \n? Very low switching gate charge \n? Extremely low on-resistance RDS(on) \n? Low gate drive power losses \n? High avalanche ruggedness;

ST

意法半導體