DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET??II POWER MOSFET

Description This application specific Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives t

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STMICROELECTRONICS

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Dual N-channel 30V - 0.017OHM - 8A SO-8 Low gate charge STripFET TM II Power MOSFET

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STMICROELECTRONICS

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Dual N-Channel 30 V (D-S) MOSFET

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VBSEMI

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Dual N-channel 30V - 0.017OHM - 8A SO-8 Low gate charge STripFET TM II Power MOSFET

文件：311.59 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

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雙路N溝道30 V、0.017 Ohm典型值、8 A STripFET(TM) II功率MOSFET，SO-8封裝

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? Optimal RDS(on)x Qgtrade-off @ 4.5 V \n? Conduction losses reduced \n? Switching losses reduced;

ST

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