Dual N-Channel Enhancement Mode Field E ffect Trans is tor

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：159.79 Kbytes 頁數(shù)：8 Pages

SAMHOP

三合微科

StripFET??MOSFET

DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：434.87 Kbytes 頁數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET??POWER MOSFET

Description The STS4DNF60L is a dual N-channel STripFETTM Power MOSFET realized with the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics

文件：135.76 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：71.01 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N - CHANNEL 60V - 0.045ohm - 4A SO-8 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：71.01 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Dual N-Channel 60 V (D-S) 175 ?C MOSFET

FEATURES ? TrenchFET? power MOSFET ? 100 Rg and UIS tested

文件：1.08919 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier

Description This product associates the latest low voltage STripFET? in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing a large variety of DC-DC converters for printers, portable equipment. Applications ■ Switching application

文件：297.94 Kbytes 頁數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 30V - 0.044ohm - 4A SO-8 STripFET??II MOSFET PLUS SCHOTTKY RECTIFIER

Description This product associates the latest low voltage STripFET? in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones. Applications ■ Switching a

文件：244.99 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

DUAL P-CHANNEL 20V - 0.07 ohm - 4A SO-8 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：249.05 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

DUAL P-CHANNEL 30V - 0.07 ohm - 4A SO-8 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：108.93 Kbytes 頁數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體