Dual P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switches

文件：1.05535 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET? in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

文件：259.959 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

P-CHANNEL 20V - 0.06ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET? in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

文件：264.95 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET??MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET? in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

文件：264.13 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

文件：274.56 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 100 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Extremely Low Qgd for Switching Losses ? 100 Rg Tested ? 100 Avalanche Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Primary Side Switch

文件：1.02053 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 100 V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Extremely Low Qgd for Switching Losses ? 100 Rg Tested ? 100 Avalanche Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? Primary Side Switch

文件：626.71 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-CHANNEL 20V - 0.090 ohm - 4A SO- 2.7V-DRIVE STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：267.63 Kbytes 頁數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

4th Generation, High-Accuracy, Ultra-Low-Power, 16-bit Temperature Sensor Platform

General Description The STS4x is a fully digital temperature sensor platform offering different accuracy classes, currently available is the STS40. The I2C interface provides multiple preconfigured I2C addresses and enables an ultra-low power budget. Designed to cost, this four-pin dual-flatno-

文件：537.45 Kbytes 頁數(shù)：14 Pages

SENSIRION

盛思銳

Surface Mount Process Sealed Tactile

文件：264.93 Kbytes 頁數(shù)：2 Pages

CIT