| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/std10100s/marking.html">STD10100S；Package：TO-220MF-K1；TRENCH SCHOTTKY BARRIER DIODE APPLICATIONS ? High frequency switch power supply ? Free wheeling diodes, polarity protection applications FEATURES ?Common cathode structure ?Low power loss, high efficiency ?High Operating Junction Temperature ?Trench MOS Schottky technology， High reliability ?RoHS product 文件：1.05281 Mbytes 頁數(shù)：9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
TRENCH SCHOTTKY BARRIER DIODE APPLICATIONS ? High frequency switch power supply ? Free wheeling diodes, polarity protection applications FEATURES ?Common cathode structure ?Low power loss, high efficiency ?High Operating Junction Temperature ?Trench MOS Schottky technology， High reliability ?RoHS product 文件：1.05281 Mbytes 頁數(shù)：9 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
絲?。?a target="_blank" title="Marking" href="/sts10100s/marking.html">STS10100S；TRENCH SCHOTTKY BARRIER DIODE APPLICATIONS ? Low voltage, high frequency rectifier ? Free wheeling diodes, polarity protection applications FEATURES ?Low power loss, high efficiency ?High Operating Junction Temperature ?Guard ring for overvoltage protection，High reliability ?RoHS product 文件：409.48 Kbytes 頁數(shù)：6 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
TRENCH SCHOTTKY BARRIER DIODE APPLICATIONS ? Low voltage, high frequency rectifier ? Free wheeling diodes, polarity protection applications FEATURES ?Low power loss, high efficiency ?High Operating Junction Temperature ?Guard ring for overvoltage protection，High reliability ?RoHS product 文件：409.48 Kbytes 頁數(shù)：6 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
絲?。?a target="_blank" title="Marking" href="/sts10100s/marking.html">STS10100S；Package：SMP-1；TRENCH SCHOTTKY BARRIER DIODE APPLICATIONS ? Low voltage, high frequency rectifier ? Free wheeling diodes, polarity protection applications FEATURES ?Low power loss, high efficiency ?High Operating Junction Temperature ?Guard ring for overvoltage protection，High reliability ?RoHS product 文件：409.48 Kbytes 頁數(shù)：6 Pages | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N - CHANNEL 30V - 0.011ohm - 10A SO-8 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size? ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rem 文件：44.73 Kbytes 頁數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/10k4l/marking.html">10K4L；Package：SO-8；P-channel 40 V, 0.0125 廓 typ., 10 A, StripFET??F6 Power MOSFET in SO-8 package Description This device is a P-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? 文件：740 Kbytes 頁數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
P-CHANNEL 30V - 0.012Ohm - 10A SO-8 STripFET II POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on resistance. General Features ■ TYPICAL RDS(on) = 0.012 ? ■ STANDARDOUTLINEFOR EASY AUTOMATED SU 文件：199.75 Kbytes 頁數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET Description This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka 文件：45.04 Kbytes 頁數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives 文件：44.96 Kbytes 頁數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
低頻或音頻放大 （LF）_功率開關(guān) （PSW）
- 封裝形式：
直插封裝
- 極限工作電壓：
80V
- 最大電流允許值：
15A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
2
- 可代換的型號：
3DK109C,
- 最大耗散功率：
125W
- 放大倍數(shù)：
β=20-50
- 圖片代號：
E-44
- vtest：
80
- htest：
999900
- atest：
15
- wtest：
125
產(chǎn)品屬性
- 產(chǎn)品編號：
STS
- 制造商：
3M
- 類別：
電纜，電線 - 管理 > 標(biāo)記物
- 系列：
STS
- 包裝：
盒
- 類型：
導(dǎo)線標(biāo)記
- 尺寸：
0.75" 寬 x 1.40" 長（19.1mm x 35.6mm）
- 電纜直徑：
0.090" ~ 0.315"（2.29mm ~ 8.00mm）
- 圖例：
空白
- 顏色：
白色
- 材料：
乙烯基
- 描述：
WIRE MARKER 19.1MM X 35.6MM WHT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
SO-8 |
59940 |
詢價(jià) | |||
ST |
10+ |
SOP-8 |
7800 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
原裝ST |
20+ |
SOP8 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
ST |
24+ |
SOP-8 |
10000 |
詢價(jià) | |||
AMCC |
25+ |
BGA |
2317 |
品牌專業(yè)分銷商,可以零售 |
詢價(jià) | ||
ST |
08+ |
SOP-8 |
2500 |
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十 |
詢價(jià) | ||
ST |
24+ |
07+ |
2 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ST |
08+ |
SOP8 |
2500 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
23+ |
SOIC-8 |
16900 |
公司只做原裝，可來電咨詢 |
詢價(jià) | ||
ST |
SOP |
15000 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) |
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